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MBRB750-HE3/81

Description
DIODE 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size481KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric View All

MBRB750-HE3/81 Overview

DIODE 7.5 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

MBRB750-HE3/81 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeD2PAK
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
MBR(F,B)735 thru MBR(F,B)760
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AC
ITO-220AC
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
2
1
MBR7xx
PIN 1
PIN 2
2
MBRF7xx
PIN 1
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1
CASE
PIN 2
TO-263AB
K
2
1
MBRB7xx
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
7.5 A
35 V to 60 V
150 A
0.57 V, 0.65 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse current at t
p
= 2.0 µs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
T
STG
V
AC
1.0
10 000
- 65 to + 150
- 65 to + 175
1500
MBR735
35
35
35
MBR745
45
45
45
7.5
150
0.5
MBR750
50
50
50
MBR760
60
60
60
UNIT
V
V
V
A
A
A
V/µs
°C
°C
V
Document Number: 88680
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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