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MMBTH10L-C-AE3-B-R

Description
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size195KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

MMBTH10L-C-AE3-B-R Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

MMBTH10L-C-AE3-B-R Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.0500 A
Maximum Collector-Emitter Voltage25 V
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Transistor typeRF SMALL SIGNAL
highest frequency bandULTRA HIGH FREQUENCY BAND
Rated crossover frequency650 MHz
Maximum Collector Base Capacitance0.7000 pF
UNISONIC TECHNOLOGIES CO., LTD
MMBTH10
RF TRANSISTOR
DESCRIPTION
The UTC
MMBTH10
is designed for using as VHF and UHF
oscillators and VHF Mixer in a tuner of a TV receiver.
NPN SILICON TRANSISTOR
*Pb-free plating product number:
MMBTH10L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBTH10-x-AE3-C-R
MMBTH10L-x-AE3-C-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
3E
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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