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NAND512W3A0AZB1T

Description
Flash, 64MX8, 35ns, PBGA55, 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-55
Categorystorage    storage   
File Size917KB,57 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND512W3A0AZB1T Overview

Flash, 64MX8, 35ns, PBGA55, 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-55

NAND512W3A0AZB1T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-55
Contacts55
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Is SamacsysN
Maximum access time35 ns
JESD-30 codeR-PBGA-B55
length10 mm
memory density536870912 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals55
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNAND TYPE
width8 mm
Base Number Matches1
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
Up to 1 Gbit memory array
Up to 32 Mbit spare area
Cost effective solutions for mass storage
applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
1.8V device: V
DD
= 1.7 to 1.95V
3.0V device: V
DD
= 2.7 to 3.6V
Figure 1. Packages
NAND INTERFACE
TSOP48 12 x 20mm
SUPPLY VOLTAGE
PAGE SIZE
x8 device: (512 + 16 spare) Bytes
x16 device: (256 + 8 spare) Words
x8 device: (16K + 512 spare) Bytes
x16 device: (8K + 256 spare) Words
Random access: 12µs (max)
Sequential access: 50ns (min)
Page program time: 200µs (typ)
Fast page copy without external buffering
USOP48 12 x 17 x 0.65mm
FBGA
BLOCK SIZE
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 9 x 11 x 1mm
TFBGA63 9 x 11 x 1.2mm
PAGE READ / PROGRAM
DATA INTEGRITY
100,000 Program/Erase cycles
10 years Data Retention
Lead-Free Components are Compliant
with the RoHS Directive
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference software
Hardware simulation models
COPY BACK PROGRAM MODE
FAST BLOCK ERASE
Block erase time: 2ms (Typ)
RoHS COMPLIANCE
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
Program/Erase locked during Power
transitions
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