DATA SHEET
SILICON POWER TRANSISTOR
2SA1742
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1742 is a power transistor developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
. This transistor is ideal
for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
ORDERING INFORMATION
Part No.
2SA1742
Package
Isolated TO-220
(Isolated TO-220)
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥
100 MIN. @V
CE
=
−2.0
V, I
C
=
−1.5
A
V
CE(sat)
≥ −0.3
V MAX. @I
C
=
−4.0
V, I
B
=
−0.2
A
• Full-mold package that does not require an insulating board or
bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
T
C
= 25°C
T
A
= 25°C
PW
≤
300
µ
s,
duty cycle
≤
10%
Conditions
Ratings
−100
−60
−7.0
−7.0
−14
−3.5
30
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14858EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1742
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
°
Parameter
Collector to emitter voltage
Symbol
V
CEO(SUS)
V
CEX(SUS)
Collector cutoff current
I
CBO
I
CER
I
CEX1
I
CEX2
Emitter cutoff current
DC current gain
I
EBO
h
FE1
h
FE2
h
FE3
Collector saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
Storage time
Fall time
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
C
ob
f
T
t
on
t
stg
t
f
Conditions
I
C
=
−4.0
V, I
B
=
−0.4
A, L = 1 mH
I
C
=
−4.0
A, I
B1
=
−I
B2
=
−0.4
A,
V
BE(OFF)
= 1.5 V, L = 180
µ
H, clamped
V
CB
=
−60
V, I
E
= 0 A
V
CE
=
−60
V, R
BE
= 50
Ω,
T
A
= 125°C
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V,
T
A
= 125°C
V
EB
=
−5.0
V, I
C
= 0 A
V
CE
=
−2.0
V, I
C
=
−0.7
A
V
CE
=
−2.0
V, I
C
=
−1.5
A
V
CE
=
−2.0
V, I
C
=
−4.0
A
I
C
=
−4.0
A, I
B
=
−0.2
A
I
C
=
−6.0
A, I
B
=
−0.3
A
I
C
=
−4.0
A, I
B
=
−0.2
A
I
C
=
−6.0
A, I
B
=
−0.3
A
Note
Note
Note
MIN.
−60
−60
TYP.
MAX.
Unit
V
V
−10
−1.0
−10
−1.0
−10
100
100
60
−0.3
−0.5
−1.2
−1.5
180
40
0.3
1.5
0.3
400
µ
A
mA
µ
A
mA
µ
A
Note
Note
Note
Note
V
V
V
V
pF
MHz
µ
s
V
CB
=
−10
V, I
E
= 0 A, f = 1.0 MHz
V
CB
=
−10
V, I
C
=
−1.0
A
I
C
=
−4.0
A, R
L
= 12.5
Ω,
I
B1
=
−I
B2
=
−0.2
A, V
CC
≅ −50
V
Refer to the test circuit.
µ
s
µ
s
Note
Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D14858EJ2V0DS
2SA1742
TYPICAL CHARACTERISTICS (T
A
= 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(°C)
Derating dT (%)
Case Temperature T
C
(°C)
Collector Current I
C
(A)
Collector current I
C
(A)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Single pulse
Collector to Emitter Voltage V
CE
(V)
Transient Thermal Resistance r
th(t)
(°C/W)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D14858EJ2V0DS
3
4
Base Saturation Voltage V
BE(sat)
(V)
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(A)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Gain Bandwidth Product f
T
(MHz)
Pulse test
Collector Capacitance C
ob
(pF)
Collector to Base Voltage V
CB
(V)
DC Current Gain h
FE
Data Sheet D14858EJ2V0DS
Fall Time t
f
(
µ
s)
StorageTime t
stg
(
µ
s)
Turn-On Time t
on
(
µ
s)
Collector Current I
C
(A)
Collector Current I
C
(A)
Collector Current I
C
(A)
Pulse test
2SA1742
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