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2SA1769

Description
Power Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size133KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SA1769 Overview

Power Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN

2SA1769 Parametric

Parameter NameAttribute value
Objectid1484019097
Parts packaging codeSIP
package instructionTO-126ML, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment10 W
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max0.5 V

2SA1769 Related Products

2SA1769 2SC4613
Description Power Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN Power Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN
Objectid 1484019097 1484019121
Parts packaging code SIP SIP
package instruction TO-126ML, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 0.7 A 0.7 A
Collector-emitter maximum voltage 160 V 160 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 100
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP NPN
Maximum power consumption environment 10 W 10 W
Maximum power dissipation(Abs) 1.5 W 1.5 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz
VCEsat-Max 0.5 V 0.4 V
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