Transistor
2SA1767
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1473A
5.0±0.2
Unit: mm
4.0±0.2
q
High collector to emitter voltage V
CEO
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
–300
–300
–5
–100
–70
750
150
–55 ~ +150
Unit
V
V
V
13.5±0.5
5.1±0.2
s
Features
0.45
–0.1
1.27
+0.2
0.45
–0.1
1.27
+0.2
mA
mW
˚C
˚C
1 2 3
2.3±0.2
mA
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –100µA, I
B
= 0
I
E
= –1µA, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= –1mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
50
7
min
–300
–5
60
150
– 0.6
V
MHz
pF
typ
max
Unit
V
V
*
h
FE
Rank classification
Q
60 ~ 150
h
FE
Rank
1
Transistor
P
C
— Ta
1000
–100
Ta=25˚C
900
–90
I
B
=–1.0mA
–100
25˚C
Ta=75˚C
–80
2SA1767
I
C
— V
CE
–120
V
CE
=–10V
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
–0.9mA
–70
–60
–50
–40
–30
–0.3mA
–20
–0.2mA
–10
0
–0.1mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
700
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
Collector current I
C
(mA)
800
–80
–25˚C
–60
–40
–20
0
0
–2
–4
–6
–8
–10
–12
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
25˚C
Ta=75˚C
I
C
/I
B
=10
300
h
FE
— I
C
120
V
CE
=–10V
f
T
— I
E
V
CB
=–10V
Ta=25˚C
Forward current transfer ratio h
FE
250
Transition frequency f
T
(MHz)
–10
–30
–100
100
200
Ta=75˚C
150
25˚C
100
–25˚C
80
60
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
40
–25˚C
50
20
–1
–3
–10
–30
–100
0
– 0.1 – 0.3
–1
–3
0
0.1
0.3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
20
10000
I
E
=0
f=1MHz
Ta=25˚C
3000
1000
I
CEO
— Ta
V
CE
=–120V
Collector output capacitance C
ob
(pF)
18
16
I
CEO
(Ta)
I
CEO
(Ta=25˚C)
–3
–10
–30
–100
14
12
10
8
6
300
100
30
10
4
2
0
–1
3
1
0
40
80
120
160
200
240
Collector to base voltage V
CB
(V)
Ambient temperature Ta (˚C)
2
京公网安备 11010802033920号
EEWORLD
