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2SA1773

Description
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size137KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SA1773 Overview

Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic/Epoxy, 3 Pin

2SA1773 Parametric

Parameter NameAttribute value
Objectid1417096880
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power consumption environment15 W
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max1 V

2SA1773 Related Products

2SA1773 2SC4616
Description Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin
Objectid 1417096880 1417096878
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 400 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 40
JEDEC-95 code TO-251 TO-251
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type PNP NPN
Maximum power consumption environment 15 W 15 W
Maximum power dissipation(Abs) 15 W 15 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
VCEsat-Max 1 V 1 V

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