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2SA1784

Description
Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, NMP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size103KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SA1784 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, NMP, 3 PIN

2SA1784 Parametric

Parameter NameAttribute value
Objectid1484020448
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
VCEsat-Max0.8 V

2SA1784 Related Products

2SA1784 2SC4644
Description Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, NMP, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, NMP, 3 PIN
Objectid 1484020448 1484020505
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A
Collector-emitter maximum voltage 400 V 400 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 60 60
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 70 MHz 70 MHz
VCEsat-Max 0.8 V 0.6 V

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