Transistor
2SA1791
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4656
1.6±0.15
Unit: mm
s
Features
q
q
q
0.4
0.8±0.1
0.4
0.2
–0.05
0.15
–0.05
+0.1
High transition frequency f
T
.
Small collector output capacitance C
ob
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25˚C)
Ratings
–50
–50
–5
–50
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol :
AL
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –10mA, I
B
= –1mA
V
CB
= –10V, I
E
= 2mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–50
–50
–5
200
– 0.1
250
1.5
500
– 0.3
V
MHz
pF
min
typ
max
– 0.1
–100
Unit
µA
µA
V
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
Q
200 ~ 400
ALQ
R
250 ~ 500
ALR
0 to 0.1
0.2±0.1
+0.1
s
Absolute Maximum Ratings
1
Transistor
P
C
— Ta
150
–120
Ta=25˚C
125
–100
–50
2SA1791
I
C
— V
CE
–60
V
CE
=–10V
25˚C
Ta=75˚C
–40
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
100
–80
I
B
=–300µA
–250µA
75
–60
Collector current I
C
(mA)
–200µA
–150µA
–30
50
–40
–100µA
–20
–20
25
–50µA
–10
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
I
C
/I
B
=10
600
h
FE
— I
C
600
V
CE
=–10V
f
T
— I
E
V
CB
=–10V
Ta=25˚C
Forward current transfer ratio h
FE
500
Ta=75˚C
400
25˚C
–25˚C
300
Transition frequency f
T
(MHz)
–3
–10
–30
–100
500
400
300
– 0.3
Ta=75˚C
25˚C
–25˚C
– 0.1
– 0.03
– 0.01
–1
200
200
100
100
–3
–10
–30
–100 –300 –1000
0
– 0.1 – 0.3
–1
0
0.1
0.3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
6
Collector output capacitance C
ob
(pF)
5
I
E
=0
f=1MHz
Ta=25˚C
4
3
2
1
0
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
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