Transistor
2SA1806
Silicon PNP epitaxial planer type
For high speed switching
Unit: mm
1.6±0.15
s
Features
q
q
q
0.4
0.8±0.1
0.4
0.2
–0.05
0.15
–0.05
+0.1
High-speed switching.
Low collector to emitter saturation voltage V
CE(sat)
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25˚C)
Ratings
–15
–15
–4
–100
–50
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol :
AK
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
(Ta=25˚C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
t
on
t
off
t
stg
*
Conditions
V
CB
= –8V, I
E
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –1V, I
C
= –10mA
V
CE
= –1V, I
C
= –1mA
I
C
= –10mA, I
B
= – 1mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –5V, I
E
= 0, f = 1MHz
(Note 1) Next page
(Note 1) Next page
(Note 1) Next page
min
typ
0 to 0.1
0.2±0.1
max
– 0.1
– 0.1
+0.1
s
Absolute Maximum Ratings
Unit
µA
µA
50
30
– 0.1
800
1500
1
12
20
19
150
– 0.2
V
MHz
pF
ns
ns
ns
*
h
FE1
Rank classification
Rank
h
FE1
Q
50 ~ 120
AKQ
R
90 ~ 150
AKR
Marking Symbol
1
Transistor
Switching time measurement circuit
t
on
, t
off
Test Circuit
V
BB
2kΩ
0.1µF
V
in
51Ω
52Ω
V
CC
=–1.5V
62Ω
V
out
2SA1806
P
C
— Ta
t
stg
Test Circuit
V
BB
=–10V
508Ω
0.1µF
V
in
51Ω
34Ω
V
CC
=–3V
30Ω
V
out
150
Collector power dissipation P
C
(mW)
125
100
75
V
in
V
out
0
10%
90%
90%
10%
V
in
V
out
0
90%
90%
t
off
V
in
=9.0V
50
25
t
on
t
off
V
in
=–5.8V
V
in
=9.8V
V
BB
=Ground V
BB
=–8.0V
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–60
Ta=25˚C
–50
I
B
=–600µA
–500µA
–40
–400µA
–300µA
–30
–200µA
–20
–100µA
–10
–100
–30
–10
–3
–1
V
CE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–100
–30
–10
–3
–1
V
BE(sat)
— I
C
I
C
/I
B
=10
Collector current I
C
(mA)
Ta=75˚C
25˚C
–25˚C
Ta=–25˚C
25˚C
75˚C
– 0.3
– 0.1
– 0.03
– 0.01
–1
– 0.3
– 0.1
– 0.03
– 0.01
–1
0
0
–2
–4
–6
–8
–10
–12
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
h
FE
— I
C
240
V
CE
=–10V
2400
f
T
— I
E
Collector output capacitance C
ob
(pF)
V
CB
=–10V
f=200MHz
Ta=25˚C
2.4
C
ob
— V
CB
I
E
=0
f=1MHz
Ta=25˚C
Forward current transfer ratio h
FE
200
Transition frequency f
T
(MHz)
2000
2.0
160
1600
1.6
120
Ta=75˚C
80
25˚C
40
–25˚C
1200
1.2
800
0.8
400
0.4
0
– 0.1 – 0.3
0
–1
–3
–10
–30
–100
1
3
10
30
100
0
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
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