RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-202, TO-202M, 3 PIN
| Parameter Name | Attribute value |
| Maker | NTE |
| Parts packaging code | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 2 A |
| Collector-emitter maximum voltage | 18 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 5 |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-202 |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 15 W |
| Maximum power dissipation(Abs) | 10 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 27 MHz |
| Base Number Matches | 1 |
| NTE79 | NTE78-TO220 | NTE78-TO202M | |
|---|---|---|---|
| Description | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-202, TO-202M, 3 PIN | Power Bipolar Transistor, 0.6A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 0.6A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin, TO-202M, 3 PIN |
| Maker | NTE | NTE | NTE |
| Parts packaging code | SFM | SFM | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN | TO-202M, 3 PIN |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 2 A | 0.6 A | 0.6 A |
| Collector-emitter maximum voltage | 18 V | 18 V | 18 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 5 | 5 | 5 |
| JEDEC-95 code | TO-202 | TO-220AB | TO-202 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN | NPN |
| Maximum power consumption environment | 15 W | 5 W | 5 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |