2SA1810
Silicon PNP Epitaxial
Application
High frequency amplifier
Features
•
Excellent high frequency characteristics
f
T
= 300 MHz typ
•
High voltage and low output capacitance
V
CEO
= –200 V, Cob = 5.0 pF typ
•
Suitable for wide band video amplifier
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
2SA1810
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tj
Tstg
Ratings
–200
–200
–5
–0.2
–0.5
1.25
10
150
–55 to +150
°C
°C
Unit
V
V
V
A
A
W
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–200
–200
–5
—
60
—
—
200
—
Typ
—
—
—
—
—
—
—
300
5.0
Max
—
—
—
–10
200
–1.0
–1.0
—
—
V
V
MHz
pF
Unit
V
V
V
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –160 V, I
E
= 0
V
CE
= –5 V, I
C
= –10 mA
V
CE
= –5 V, I
C
= –30 mA
I
C
= –30 mA, I
B
= –3 mA
V
CE
= –20 V, I
C
= –30 mA
V
CB
= –30 V, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
B
60 to 120
V
(BR)EBO
I
CBO
h
FE
*
1
V
BE
V
CE(sat)
f
T
Cob
1. The 2SA1810 is grouped by h
FE
as follows.
C
100 to 200
2
2SA1810
Maximum Collector Dissipation Curve
12
Collector power dissipation Pc (W)
–1.0
–0.5
8
Collector Current I
C
(A)
1 Shot pulse
Ta = 25°C
Area of Safe Operation
–0.2
–0.1
–0.05
ms
10
n
=
tio
PW
era
Op 5
°
C)
DC = 2
(T
C
4
–0.02
–0.01
–10
0
50
100
Case Temperature T
C
(°C)
150
–20
–50 –100 –200 –500 –1000
Collector to emitter Voltage V
CE
(V)
Typical Output Characteristics
–200
T
C
= 25°C
DC Current Transfer Ratio vs.
Collector Current
1,000
DC current transfer ratio h
FE
500
200
100
50
20
10
–1
–2
–5 –10 –20 –50 –100–200
Collector current I
C
(mA)
T
C
= 75°C
25
°C
–25°C
V
CE
= –5 V
Pulse
P
c
.25
=1
Collector Current I
C
(mA)
–160
–120
0
–2.
.6
8
–1
–1.
.4
–1.2
.8
1
0
–0
–
.
–1
–0.6
–0.4
W
–80
–0.2 mA
–40
I
B
= 0
0
–2
–4
–6
–8
–10
Collector to emitter Voltage V
CE
(V)
3
2SA1810
Collector to Emitter Saturation Voltage vs.
Collector Current
–10
Collector to emitter saturation voltage
V
CE (sat) (V)
–5
–2
–1.0
–0.5
T
C
= 75°C
–0.2
–0.1
–25°C
–0.05
–1
–2
–5 –10 –20 –50 –100–200
Collector current I
C
(mA)
25°C
Collector current I
C
(mA)
l
C
= 10 l
B
Pulse
Typical Transfer Characteristics
–200
V
CE
= –5 V
–100 Pulse
T
C
= 75
°C
–50
–20
–10
–5
–2
–1
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Base to emitter voltage V
BE
(V)
Collector Output Capacitance
Collector to Base Voltage
Collector output capacitance C
ob
(pF)
Gain Bandwidth Product vs.
Collector Current
Gain bandwidth product f
T
(MHz)
1,000
500
200
100
50
20
10
–1
–2
–5 –10 –20 –50 –100–200
Collector current I
C
(mA)
V
CE
= –20 V
Pulse
100
I
E
= 0 f = 1 MHz
50
20
10
5
2
1
–1
–2
–5 –10 –20
–50 –100
Collector to base voltage V
CB
(V)
4
25
°C
–25
°C
Unit: mm
8.0
±
0.5
0
°
12
φ
3.1
+0.15
–0.1
3.7
±
0.7
11.0
±
0.5
2.7
±
0.4
12
0
°
2.3
±
0.3
120°
1.1
15.6
±
0.5
0.8
2.29
±
0.5
2.29
±
0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
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