2SA1816 datasheet, PDF - EEWORLD Datasheet

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2SA1816: DescriptionSilicon PNP epitaxial planer type; CategoryDiscrete semiconductor The transistor; File Size16KB，1 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SA1816 Overview

Silicon PNP epitaxial planer type

2SA1816 Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	90
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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Transistor

2SA1816(Tentative)

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification

4.0±0.2

3.0±0.2

Unit: mm

Features

High collector to emitter voltage V

CEO

15.6±0.5

Absolute Maximum Ratings

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

EBO

stg

(Ta=25˚C)

0.7±0.1

Ratings

–150

–5

–100

–50

300

150

–55 ~ +150

Unit

˚C

1:Emitter

2:Collector

3:Base

1.27 1.27

2.54±0.15

EIAJ:SC–72

New S Type Package

Electrical Characteristics

Parameter

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Noise voltage

(Ta=25˚C)

Symbol

CBO

CEO

EBO

FE*1

CE(sat)

Conditions

= –100V, I

= 0

= –100µA, I

= 0

= –10µA, I

= 0

= –5V, I

= –10mA

= –30mA, I

= –3mA

= –10V, I

= 10mA, f = 200MHz

= –10V, I

= 0, f = 1MHz

= –10V, I

= – 1mA, G

= 80dB

= 100kΩ, Function = FLAT

150

200

–150

–5

450

–1

MHz

min

typ

max

–1

Unit

µA

Rank classification

90 ~ 155

130 ~ 220

185 ~ 330

260 ~ 450

Rank

2.0±0.2

marking

+0.2

0.45–0.1

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