Transistor
2SA1961
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC5419
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.5
4.5±0.1
0.45
–0.05
2.5±0.1
0.7
4.0
s
Features
q
0.65 max.
1.0 1.0
0.2
High collector to emitter voltage V
CEO
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
Ratings
–200
–200
–5
– 0.1
–70
1
150
–55 ~ +150
Unit
V
V
V
A
mA
W
˚C
˚C
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
0.45
–0.05
+0.1
+0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
2.5±0.5
1
2
2.5±0.5
3
1:Emitter
2:Collector
3:Base
MT2 Type Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2±0.1
0.65
max.
0.45
+0.1
– 0.05
(HW type)
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –100µA, I
B
= 0
I
E
= –1µA, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –50mA, I
B
= –5mA
V
CB
= –5V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
30
7
min
–200
–5
30
150
–2.5
typ
max
Unit
V
V
–
V
MHz
pF
*1
h
FE
Rank classification
P
30 ~ 100
Q
60 ~ 150
Rank
h
FE
14.5±0.5
1
Transistor
P
C
— Ta
2.0
–120
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ta=25˚C
–100
–100
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
–60
– 0.5mA
– 0.4mA
–40
– 0.3mA
– 0.2mA
– 0.1mA
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
0
2SA1961
I
C
— V
CE
–120
V
CE
=–10V
25˚C
Ta=75˚C
–80
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(mA)
–80
1.2
Collector current I
C
(mA)
1.6
I
B
=–1.0mA
–60
0.8
–40
0.4
–20
–20
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=10
240
h
FE
— I
C
24
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=–10V
f=1MHz
I
E
=0
Ta=25˚C
Forward current transfer ratio h
FE
210
180
150
Ta=75˚C
120
25˚C
90
60
30
0
–1
–25˚C
20
16
– 0.3
– 0.1
– 0.03
– 0.01
12
8
4
– 0.003
– 0.001
–1
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
0
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector to base voltage V
CB
(V)
2
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