ML725B19F datasheet, PDF - EEWORLD Datasheet

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ML725B19F: DescriptionMITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES; CategoryLED optoelectronic/LED photoelectric; File Size195KB，4 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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ML725B19F Overview

MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES

ML725B19F Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	HERMETIC SEALED PACKAGE-4
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
Configuration	SINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current	0.03 A
Maximum forward voltage	1.5 V
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Optoelectronic device types	LASER DIODE
Nominal output power	10 mW
peak wavelength	1310 nm
Maximum response time	1.5e-10 s
Semiconductor material	InGaAsP
shape	ROUND
size	1.5 mm
Spectral bandwidth	1e-9 m
surface mount	NO
Maximum threshold current	15 mA

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MITSUBISHI LASER DIODES

ML7xx19 SERIES

Notice: Some parametric limits are subject to change.

1310nm InGaAsP FP LASER DIODES

TYPE

NAME

DESCRIPTION

ML720J19S, ML720K19S, ML728C19S

ML725B19F, ML725C19F

FEATURES

•1310nm

typical emission wavelength, FP-LDs

•Wide

temperature range operation(-40 to 85ºC)

•φ5.6mm

TO-CA N package

Flat window cap : ML720J19S, ML725B19F

Ball lens cap : ML720K19S, ML725C19F

•φ3.8mm

TO-CA N package

Ball lens cap : ML728C19S

ML7XX19 series are InGaAsP laser diodes which provide

a stable, single transverse mode oscillation with emission

wavelength of 1310nm and standard continuous light output

of 5mW.

ML7XX19 are hermetically sealed devices having the photo

diode for optical output monitoring. This is suitable for such

applications as the light sources for optical communication

systems up to 2.5Gbps transmission applications.

APPLICATION

•Optical

communication system

ABSOLUTE MAXIMUM RATINGS

Symbol

VRL

VRD

IFD

Tstg

Parameter

Light output power

Laser reverse voltage

PD reverse voltage

PD forward current

Operation temperature

Storage temperature

Conditions

Ratings

10[7]

-40 to +85

-40 to +100

Unit

ºC

ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25

Symbol

Ith

Iop

Vop

λc

∆λ

θ//

θ⊥

tr,tf

Pf <2>

Df <2>

Parameter

Threshold current

Operation current

Operating voltage

Slope efficiency

Center wavelength

Spectral Width

Beam divergence angle(parallel)

Beam divergence angle

(perpendicular)

Rise and Fall time (20%-80%)

Monitor Current (PD)

Dark Current (PD)

Capacitance (PD)

Fiber Coupling characteristics

at peak coupling <3>

Test Conditions

CW, Po=5mW[3mW]

CW, Po=5mW[3mW],RMS(-20dB)

CW, Po=5mW[3mW]

Ib=Ith,Po=5mW[3mW],20-80%

CW, Po=5mW[3mW], VRD=1V,

VRD=10V

VRD=10V, f=1MHz

CW, PL=3mW,SI10/125

ML720K19S

CW, PL=3mW,SI10/125

ML725C19F

ML728C19S

Min.

---

0.3[0.2]

1290

---

0.1

---

0.2

5.0

3.0

Typ.

1.1

0.45[0.35]

1310

1.0

25[11]

30[11]

0.1

0.5

---

0.5

5.8

3.4

Max.

1.5

0.6[0.5]

1330

2.0

---

0.15

0.9

0.1

---

6.2

3.8

Unit

mW/mA

deg.

nsec

µA

Note : <1> [ ] applied to the lens cap type.

Note : <2> Pf, Df are applied to the ball lens type.

Note : <3> Df is a distance between reference plane of the base to the fiber.

MITSUBISHI

ELECTRIC

May 2004

ML725B19F Related Products

	ML725B19F	ML720J19S	ML720K19S	ML728C19S	ML7XX19	ML725C19F
Description	MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES	MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES	MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES	MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES	MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES	MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES
Maker	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	-	Mitsubishi
package instruction	HERMETIC SEALED PACKAGE-4	HERMETIC SEALED PACKAGE-4	HERMETIC SEALED PACKAGE-4	HERMETIC SEALED PACKAGE-4	-	HERMETIC SEALED PACKAGE-4
Reach Compliance Code	unknow	unknow	unknow	unknow	-	unknow
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-	-	HIGH RELIABILITY
Configuration	SINGLE WITH BUILT-IN PHOTO DIODE	SINGLE WITH BUILT-IN PHOTO DIODE	SINGLE WITH BUILT-IN PHOTO DIODE	SINGLE WITH BUILT-IN PHOTO DIODE	-	SINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current	0.03 A	0.03 A	0.03 A	0.03 A	-	0.03 A
Maximum forward voltage	1.5 V	1.5 V	1.5 V	1.5 V	-	1.5 V
Installation features	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT	-	THROUGH HOLE MOUNT
Number of functions	1	1	1	1	-	1
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	-	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-	-40 °C
Optoelectronic device types	LASER DIODE	LASER DIODE	LASER DIODE	LASER DIODE	-	LASER DIODE
Nominal output power	10 mW	10 mW	7 mW	7 mW	-	7 mW
peak wavelength	1310 nm	1310 nm	1310 nm	1310 nm	-	1310 nm
Maximum response time	1.5e-10 s	1.5e-10 s	1.5e-10 s	1.5e-10 s	-	1.5e-10 s
Semiconductor material	InGaAsP	InGaAsP	InGaAsP	InGaAsP	-	InGaAsP
shape	ROUND	ROUND	ROUND	ROUND	-	ROUND
size	1.5 mm	1.5 mm	1.5 mm	-	-	1.5 mm
Spectral bandwidth	1e-9 m	1e-9 m	1e-9 m	1e-9 m	-	1e-9 m
surface mount	NO	NO	NO	NO	-	NO
Maximum threshold current	15 mA	15 mA	15 mA	15 mA	-	15 mA

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