Transistor
2SA720A
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1318A
5.0±0.2
Unit: mm
4.0±0.2
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
–80
–70
–5
–1
– 0.5
625
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
13.5±0.5
High collector to emitter voltage V
CEO
.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
5.1±0.2
s
Features
0.45
–0.1
1.27
+0.2
0.45
–0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
*2
V
CE
= –10V, I
C
= –500mA
*2
I
C
= –300mA, I
B
= –30mA
*2
I
C
= –300mA, I
B
= –30mA
*2
V
CB
= –10V, I
E
= 50mA, f = 100MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–80
–70
–5
85
40
– 0.2
– 0.85
120
20
*2
min
typ
max
– 0.1
Unit
µA
V
V
V
240
– 0.6
–1.5
V
V
MHz
30
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
Rank
h
FE1
1
Transistor
P
C
— Ta
800
–1.2
Ta=25˚C
700
–1.0
I
B
=–10mA
–1.0
2SA720A
I
C
— V
CE
–1.2
V
CE
=–10V
Ta=25˚C
I
C
— I
B
Collector power dissipation P
C
(mW)
Collector current I
C
(A)
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
– 0.8
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
– 0.6
– 0.4
– 0.2
0
0
–2
–4
–6
–8
–10
Collector current I
C
(A)
–9mA
– 0.8
– 0.6
– 0.4
– 0.2
0
0
–2
–4
–6
–8
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
–3
–1
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–100
–30
–10
–3
–1
Ta=–25˚C
75˚C
I
C
/I
B
=10
300
h
FE
— I
C
V
CE
=–10V
Forward current transfer ratio h
FE
250
200
Ta=75˚C
25˚C
– 0.3
– 0.1
– 0.03
– 0.01
25˚C
Ta=75˚C
25˚C
150
–25˚C
100
–25˚C
– 0.3
– 0.1
– 0.03
– 0.01
–1
50
– 0.003
– 0.001
–1
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
0
–1
–3
–10
–30
–100 –300 –1000
Collector current I
C
(mA)
Collector current I
C
(A)
Collector current I
C
(mA)
f
T
— I
E
200
180
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CB
=–10V
Ta=25˚C
50
45
40
10
3
I
E
=0
f=1MHz
Ta=25˚C
10
4
I
CBO
— Ta
V
CB
=–20V
Transition frequency f
T
(MHz)
160
140
120
100
80
60
40
20
0
1
3
10
30
100
30
25
20
15
I
CBO
(Ta)
I
CBO
(Ta=25˚C)
–3
–10
–30
–100
35
10
2
10
10
5
0
–1
1
0
60
120
180
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Ambient temperature Ta (˚C)
2
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