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2SA743A

Description
Silicon PNP Epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size27KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

2SA743A Overview

Silicon PNP Epitaxial

2SA743A Parametric

Parameter NameAttribute value
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1
2SA743, 2SA743A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
*
1
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tj
Tstg
2SA743
–50
–50
–4
–1
0.75
8
150
–55 to +150
2SA743A
–80
–80
–4
–1
0.75
8
150
–55 to +150
°C
°C
Unit
V
V
V
A
W

2SA743A Related Products

2SA743A 2SA743
Description Silicon PNP Epitaxial Silicon PNP Epitaxial
Parts packaging code SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 80 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 20 20
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 140 °C 140 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 8 W 8 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz
Base Number Matches 1 1

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