DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D167
BGY925/5
UHF amplifier module
Product specification
Supersedes data of 2000 Jan 10
2000 Jan 17
Philips Semiconductors
Product specification
UHF amplifier module
FEATURES
•
26 V nominal supply voltage
•
23 W output power into a load of 50
Ω
with an RF drive
power of 36 mW.
APPLICATIONS
•
Base station transmitting equipment operating in the
920 to 960 MHz frequency range.
DESCRIPTION
The BGY925/5 is a three-stage UHF amplifier module in a
SOT365A package. The module consists of one NPN
silicon planar transistor die and two silicon MOSFET dies
mounted together with matching and bias circuitry on a
metallized ceramic AlN substrate.
handbook, halfpage
BGY925/5
PINNING - SOT365A
PIN
1
2
3
4
Flange
RF input
V
S1
V
S2
RF output
ground
DESCRIPTION
1
2
3
4
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°C,
100 % tested during manufacture.
MODE OF
OPERATION
CW
Note
1. At P
L
= 16 W.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
S1
V
S2
P
D
P
L
T
stg
T
mb
DC supply voltage
DC supply voltage
input drive power
load power
storage temperature
operating mounting-base temperature
PARAMETER
−
−
−
−
−30
−10
MIN.
5.5
28
80
32
+100
+90
MAX.
V
V
mW
W
°C
°C
UNIT
f
(MHz)
920 to 960
V
S1
(V)
5
V
S2
(V)
26
P
L
(W)
23
G
p
(dB)
≥28
η
(%)
(note
1)
≥30
Z
S
, Z
L
(Ω)
50
2000 Jan 17
2
Philips Semiconductors
Product specification
UHF amplifier module
CHARACTERISTICS
Z
S
= Z
L
= 50
Ω;
P
L
= 23 W; V
S1
= 5 V; V
S2
= 26 V; T
mb
= 25
°C;
unless otherwise specified.
SYMBOL
f
I
S1
I
S2
P
L
G
p
η
H
2
H
3
VSWR
in
PARAMETER
frequency range
supply current
supply current
load power
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
reverse intermodulation
direct intermodulation
NF
B
noise figure
AM bandwidth
ruggedness
corner frequency = 3 dB;
P
carrier
= 16 W; modulation = 20%
VSWR
≤
5 : 1 through all phases;
V
S2
= 26 V; P
L
= 23 W
VSWR
≤
3 : 1 through all phases;
V
S2
= 26 to 27 V; P
L
= 23 W
P
carrier
= 16 W; P
interference
= 1.6
µW;
f
i
= f
c
±
600 kHz
P
carrier
= 16 W; P
interference
= 1.6 mW;
f
i
= f
c
+ 270 kHz
160 mW
≤
P
L
≤
23 W
2 W
≤
P
L
≤
23 W
P
L
= 16 W
P
L
= 16 W
P
L
= 16 W
P
D
<
−60
dBm
CONDITIONS
−
−
23
28
28
30
−
−
−
−
−
−
−
2
MIN.
920
−
50
500
−
30
30
−
−
−
−
−
−80
−55
−
−
TYP.
BGY925/5
MAX.
960
−
−
−
34
32
−
−35
−40
2:1
−60
−
−
8
−
UNIT
MHz
mA
mA
W
dB
dB
%
dBc
dBc
dBc
dBc
dBc
dBc
MHz
no degradation
2000 Jan 17
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY925/5
handbook, halfpage
35
MCD830
handbook, halfpage
60
MCD831
Gp
(dB)
30
920 MHz
η
(%)
40
920 MHz
940 MHz
960 MHz
940 MHz
960 MHz
25
20
20
0
10
20
PL (W)
30
0
0
10
20
PL (W)
30
Z
S
= Z
L
= 50
Ω;
V
S1
= 5 V; V
S2
= 26 V; T
mb
= 25
°C.
Z
S
= Z
L
= 50
Ω;
V
S1
= 5 V; V
S2
= 26 V; T
mb
= 25
°C.
Fig.2
Power gain as a function of load power;
typical values.
Fig.3
Efficiency as a function of load power;
typical values.
handbook, halfpage
35
MCD832
handbook, halfpage
3
MCD833
Gp
(dB)
30
940 MHz
960 MHz
IS2
(A)
2
920 MHz
25
1
20
10
−4
10
−2
1
PL (W)
10
2
0
10
−4
10
−2
1
10
2
PL (W)
Z
S
= Z
L
= 50
Ω;
V
S1
= 5 V; V
S2
= 26 V; T
mb
= 25
°C.
Z
S
= Z
L
= 50
Ω;
V
S1
= 5 V; V
S2
= 26 V; T
mb
= 25
°C;
f = 920 to 960 MHz.
Fig.4
Power gain as a function of load power;
typical values.
Fig.5
Supply current as a function of load power;
typical values.
2000 Jan 17
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY925/5
handbook, halfpage
35
MCD834
handbook, halfpage
0
MCD835
Gp
(dB)
30
Return
Losses
(dB)
−4
−8
−12
25
−16
20
800
900
1000
f (MHz)
1100
−20
800
900
1000
f (MHz)
1100
Z
S
= Z
L
= 50
Ω;
P
D
=
−30
dBm; V
S1
= 5 V; V
S2
= 26 V; T
mb
= 25
°C.
Z
S
= Z
L
= 50
Ω;
P
D
=
−30
dBm; V
S1
= 5 V; V
S2
= 26 V; T
mb
= 25
°C.
Fig.6
Small signal in band power gain as a
function of frequency; typical values.
Fig.7
Small signal in band input return losses as
a function of frequency; typical values.
handbook, halfpage
G
40
MCD836
p
(dB)
20
handbook, halfpage
34
MCD837
Gp
(dB)
32
0
30
−20
28
−40
(7)
(6)
(4)
(5)
(2)
(3)
(1)
−60
26
−80
24
0
500
1000
f (MHz)
1500
0
10
20
30
PL (W)
40
Z
S
= Z
L
= 50
Ω;
V
S1
= 5 V; V
S2
= 26 V; T
mb
= 25
°C.
(1)
(2)
(3)
(4)
T
amb
=
−33°C.
T
amb
=
−20°C.
T
amb
= 3°C.
T
amb
= 25°C.
(5) T
amb
= 50°C.
(6) T
amb
= 75°C.
(7) T
amb
= 100°C.
Z
S
= Z
L
= 50
Ω;
V
S1
= 5 V; V
S2
= 26 V; P
D
=
−30
dBm; T
mb
= 25
°C.
Fig.8
Small signal out band power gain as a
function frequency; typical values.
Fig.9
Power gain as a function of load power;
typical values
2000 Jan 17
5
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