DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BDL31
NPN BISS-transistor
Product specification
Supersedes data of 1998 Aug 03
1999 Apr 28
Philips Semiconductors
Product specification
NPN BISS-transistor
FEATURES
•
High current (max. 5 A)
•
Low voltage (max. 10 V)
•
Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
•
Battery powered units where high current and low power
consumption are important.
DESCRIPTION
1
BDL31
PINNING
PIN
1
2
3
4
base
not connected
emitter
collector
DESCRIPTION
handbook, halfpage
4
4
NPN BISS (Breakthrough In Small Signal) transistor in a
SOT223 plastic package. PNP complement: BDL32.
1
Top view
2
3
MAM372
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
40
10
6
5
10
1
1.35
+150
150
+150
V
V
V
A
A
A
W
°C
°C
°C
UNIT
1999 Apr 28
2
Philips Semiconductors
Product specification
NPN BISS-transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
92
10
BDL31
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 2 V; note 1
I
C
= 0.5 A
I
C
= 1 A
I
C
= 3 A
I
C
= 5 A
V
CE
= 1 V; I
C
= 2 A; note 1
V
CEsat
collector-emitter saturation
voltage
note 1
I
C
= 1 A; I
B
= 20 mA
I
C
= 2 A; I
B
= 200 mA
I
C
= 3 A; I
B
= 60 mA
I
C
= 5 A; I
B
= 100 mA
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector capacitance
transition frequency
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
−
−
−
−
−
180
350
450
800
130
−
mV
mV
mV
mV
pF
MHz
200
200
150
100
180
−
−
−
−
−
−
−
−
MIN.
MAX.
50
50
50
UNIT
nA
µA
nA
I
C
= 500 mA; V
CE
= 10 V; f = 100 MHz 100
1999 Apr 28
3
Philips Semiconductors
Product specification
NPN BISS-transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BDL31
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
1999 Apr 28
4
Philips Semiconductors
Product specification
NPN BISS-transistor
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
BDL31
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 28
5
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