DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11W/X
NPN 2 GHz power transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1996 Jun 04
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
FEATURES
•
High power gain
•
High efficiency
•
Small size discrete power amplifier
•
1.9 GHz operating area
•
Gold metallization ensures excellent reliability
•
Linear and non-linear operation.
APPLICATIONS
•
Common emitter class-AB operation in handheld radio
equipment at 1.9 GHz such as DECT, PHS.
•
Driver for DCS 1800.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic 4-pin dual-emitter SOT343 package.
Marking code: S4
1
Top view
2
handbook, halfpage
BFG11W/X
PINNING - SOT343
PIN
1
2
3
4
collector
emitter
base
emitter
DESCRIPTION
4
3
MBK523
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
s
≤
60
°C
in a common-emitter test circuit.
MODE OF OPERATION
Pulsed, class-AB,
δ
< 1 : 2; t
p
= 5 ms
f
(GHz)
1.9
V
CE
(V)
3.6
P
L
(mW)
400
G
p
(dB)
≥6
η
c
(%)
≥60
1996 Jun 04
2
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
up to T
s
= 60
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−65
−
MIN.
20
8
2.5
500
760
+150
175
BFG11W/X
MAX.
V
V
V
UNIT
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 60
°C;
P
tot
= 760 mW; note 1
VALUE
150
UNIT
K/W
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector tab.
10
3
handbook, full pagewidth
Zth j-s
(K/W)
MGD411
δ
=
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0.1
tp
10
2
10
P
δ
= T
tp
T
1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1996 Jun 04
3
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
I
C
= 0.1 mA; open emitter
I
C
= 10 mA; open base
I
E
= 0.1 mA; open collector
V
CE
= 8 V; V
BE
= 0
V
CE
= 5 V; I
C
= 100 mA
V
CB
= 3.6 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 3.6 V; I
C
= 0; f = 1 MHz
8
2.5
−
25
−
−
BFG11W/X
MIN.
20
MAX.
−
−
−
100
−
5
4
UNIT
V
V
V
µA
pF
pF
APPLICATION INFORMATION
RF performance at T
s
≤
60
°C
in a common-emitter test circuit.
MODE OF OPERATION
Pulsed, class-AB,
δ
< 1 : 2; t
p
= 5 ms
Ruggedness in class-AB operation
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions at f = 1.9 GHz: t
p
= 1.25 ms,
δ
= 1 : 8 at V
CE
= 7 V and t
p
= 5 ms,
δ
= 1 : 2 at
V
CE
= 4.5 V.
f
(GHz)
1.9
V
CE
(V)
3.6
I
CQ
(mA)
1
P
L
(mW)
400
G
p
(dB)
≥6
η
c
(%)
≥60
handbook, halfpage
8
MGD412
90
η
C
(%)
70
MGD552
handbook, halfpage
0
80
η
c
(%)
60
Gp
(dB)
6
Gp
dim
(dBc)
−20
η
C
dim
4
50
−40
40
2
30
−60
η
c
20
0
0
200
400
600
10
800
PL (mW)
−80
0
10
20
Po(av) (dBm)
0
30
V
CE
= 3.6 V; I
cϕ
= 1 mA; f
1
= 1990.0 MHz;
f
2
= 1990.1 MHz;
δ
= 1 : 8; t
p
= 625
µs.
V
CE
= 3.6 V; V
BE
= 0.65 V; f = 1.9 GHz;
δ
< 1 : 8; t
p
= 1.25 ms.
Fig.4
Fig.3
Power gain and efficiency as functions
of load power; typical values.
Two tone intermodulation distortion
and efficiency as functions of average
output power; typical values.
1996 Jun 04
4
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
List of components used in test circuit (see Figs
5
and
6)
COMPONENT
C1, C8, C9, C10
C2, C3
C4
C5
C6, C7,
C11, C12, C13
C14, C15
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
L11, L12
R1
R2
R3
T1
Notes
DESCRIPTION
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
electrolytic capacitor
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
RF choke
metal film resistor
metal film resistor
metal film resistor
bias transistor
1
µH
78.7
Ω;
0.4 W
38.3
Ω;
0.4 W
10
Ω;
0.4 W
BC548; note 3
VALUE
24 pF
2 pF
1.2 pF
0.2 pF
1.3 pF
10 nF
470
µF;
10 V
length 22.5 mm
width 0.9 mm
length 6 mm
width 0.9 mm
length 1 mm
width 0.9 mm
length 2.5 mm
width 0.9 mm
length 4.5 mm
width 0.9 mm
length 24.5 mm
width 0.9 mm
length 20 mm
width 0.9 mm
length 10.5 mm
width 0.9 mm
length 4.4 mm
width 0.4 mm
length 19.7 mm
width 0.4 mm
DIMENSIONS
BFG11W/X
CATALOGUE N0.
2222 032 14152
4330 030 36301
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric
ε
r
= 6.15;
tan
δ
= 0.0019; thickness = 0.64 mm; copper cladding = 35
µm.
3. Or equivalent (V
BE
= 0.65 V at T
amb
= 25
°C).
1996 Jun 04
5
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