DISCRETE SEMICONDUCTORS
DATA SHEET
BLW33
UHF linear power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers
for television
transmitters and transposers. The
excellent d.c. dissipation
properties
for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a
1
⁄
4
" capstan
envelope with ceramic cap.
BLW33
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION
class-A; linear amplifier
f
vision
MHz
860
860
Note
1. Three-tone test method (vision carrier
−8
dB, sound carrier
−7
dB, sideband signal
−16
dB), zero dB corresponds to
peak sync level.
V
CE
V
25
25
I
C
mA
300
300
T
h
°C
70
25
d
im
(1)
dB
−60
−60
P
o sync
(1)
W
>
typ.
1,0
>
1,15 typ.
G
p
dB
10,0
10,5
PIN CONFIGURATION
PINNING - SOT122A.
PIN
1
2
DESCRIPTION
collector
emitter
base
emitter
handbook, halfpage
4
1
3
3
4
2
Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); V
BE
= 0
open base
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f
>
1 MHz
Total power dissipation up to T
mb
= 25
°C
Storage temperature
Operating junction temperature
I
C
I
CM
P
tot
T
stg
T
j
max.
max.
max.
max.
V
CESM
V
CEO
V
EBO
max.
max.
max.
BLW33
50 V
30 V
4 V
1,25 A
1,9 A
19,3 W
200
°C
−65
to
+150 °C
handbook, halfpage
10
MGP442
handbook, halfpage
20
MGP443
Ptot
(W)
IC
(A)
(1)
15
1
Th = 70
°C
Tmb = 25
°C
10
5
10
−1
1
10
VCE (V)
10
2
0
0
50
Th (°C)
100
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE
(see Fig.4)
From junction to mounting base
(dissipation = 7,5 W; T
mb
= 74,5
°C;
i.e. T
h
= 70
°C)
From mounting base to heatsink
R
th j-mb
R
th mb-h
=
=
10,1 K/W
0,6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW33
handbook, full pagewidth
15
MGP444
Th = 125
°C
100
°C
75
°C
Rth j-h
(K/W)
50
°C
25
°C
10
150
°C
175
°C
Tj = 200
°C
0
°C
100
°C
125
°C
5
0
5
10
15
20
Ptot (W)
25
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink
and junction temperature as parameters. (R
th mb-h
= 0,6 K/W.)
Example
Nominal class-A operation: V
CE
= 25 V; I
C
= 300 mA; T
h
= 70
°C.
Fig.4 shows:
R
th j-h
T
j
Typical device: R
th j-h
T
j
max.
max.
typ.
typ.
10,7 K/W
150
°C
8,25 K/W
132
°C
August 1986
4
Philips Semiconductors
Product specification
UHF linear power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 4 mA
open base; I
C
= 30 mA
Emitter-base breakdown voltage
open collector; I
E
= 2 mA
Collector cut-off current
V
BE
= 0; V
CE
= 30 V
V
BE
= 0; V
CE
= 30 V; T
j
= 175
°C
D.C. current gain
I
C
= 300 mA; V
CE
= 25 V
I
C
= 300 mA; V
CE
= 25 V; T
j
= 175
°C
Collector-emitter saturation voltage
(1)
I
C
= 600 mA; I
B
= 60 mA
Transition frequency at f = 500 MHz
(2)
−I
E
= 300 mA; V
CB
= 25 V
−I
E
= 600 mA; V
CB
= 25 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 25 V
Feedback capacitance at f = 1 MHz
I
C
= 20 mA; V
CE
= 25 V
Collector-stud capacitance
Notes
1. Measured under pulse conditions: t
p
≤
300
µs; δ ≤
0,02.
2. Measured under pulse conditions: t
p
≤
50
µs; δ ≤
0,01.
C
re
C
cs
typ.
typ.
C
c
typ.
f
T
f
T
typ.
typ.
V
CEsat
typ.
h
FE
h
FE
I
CES
I
CES
<
<
>
typ.
<
V
(BR)EBO
>
V
(BR)CES
V
(BR)CEO
>
>
BLW33
50 V
30 V
4 V
1,0 mA
2,5 mA
20
40
120
450 mV
3,4 GHz
3,1 GHz
6,6 pF
3,5 pF
1,2 pF
August 1986
5
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