INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2532AL
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High
Switching Speed
APPLICATIONS
·Designed
for use in horizontal deflection circuits of high
resolution monitors.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
800
7.5
16
UNIT
V
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
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i
em
cs
.is
w
w
V
V
A
40
A
10
A
15
125
150
-55~150
A
W
℃
℃
I
BM
P
C
T
J
T
stg
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2532AL
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0
800
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
7.5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 7A; I
B
= 1.17A
B
5.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 7A; I
B
= 1.17A
B
1.0
1.0
2.0
1.0
V
I
CES
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
Switching times
t
stg
t
f
Storage Time
Fall Time
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i
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cs
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w
w
V
EB
= 7.5V; I
C
= 0
I
C
= 1A; V
CE
= 5V
I
C
= 7A; V
CE
= 5V
6
I
C
= 7A , I
B(
end
)
= 1A; L
C
= 100μH;
V
CC
= 138V; C
fb
= 3nF
V
CE
= 1500V; V
BE
= 0
V
CE
= 1500V; V
BE
= 0; T
C
=125℃
mA
mA
17
12.5
1.8
0.1
μs
μs
isc Website：www.iscsemi.cn
2
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