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BU4530AX

Description
TRANSISTOR 16 A, 800 V, NPN, Si, POWER TRANSISTOR, PLASTIC, FULL PACK-3, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size22KB,4 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BU4530AX Overview

TRANSISTOR 16 A, 800 V, NPN, Si, POWER TRANSISTOR, PLASTIC, FULL PACK-3, BIP General Purpose Power

BU4530AX Parametric

Parameter NameAttribute value
MakerNXP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)16 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)4.2
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment45 W
Maximum power dissipation(Abs)45 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max3 V
Base Number Matches1
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4530AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
10
8.0
t.b.f
t.b.f
MAX.
1500
800
16
40
45
3.0
-
-
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
µs
µs
T
hs
25 ˚C
I
C
= 10 A; I
B
= 2.5 A
f = 32kHz
f = 90kHz
I
Csat
= 10.0 A; f = 32kHz
I
Csat
= 8.0 A; f = 90kHz
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
16
40
10
15
10
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
25 ˚C
1
Turn-off current.
January 1998
1
Rev 1.000
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