TRANSISTOR 8 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power
| Parameter Name | Attribute value |
| Maker | NXP |
| Parts packaging code | SFM |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Avalanche Energy Efficiency Rating (Eas) | 70 mJ |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 8 A |
| Maximum drain-source on-resistance | 0.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 100 pF |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 25 W |
| Maximum pulsed drain current (IDM) | 32 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 145 ns |
| Maximum opening time (tons) | 60 ns |
| Base Number Matches | 1 |
| BUK473-100B | BUK473-100A | BUK473-100B,127 | BUK473-100B127 | BUK473-100A,127 | BUK473-100A127 | |
|---|---|---|---|---|---|---|
| Description | TRANSISTOR 8 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | TRANSISTOR 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | 8A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TRANSISTOR 8 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power | 9A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TRANSISTOR 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power |
| Maker | NXP | NXP | NXP | NXP | NXP | NXP |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 70 mJ | 70 mJ | 70 mJ | 70 mJ | 70 mJ | 70 mJ |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Maximum drain current (ID) | 8 A | 9 A | 8 A | 8 A | 9 A | 9 A |
| Maximum drain-source on-resistance | 0.2 Ω | 0.16 Ω | 0.2 Ω | 0.2 Ω | 0.16 Ω | 0.16 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 32 A | 36 A | 32 A | 32 A | 36 A | 36 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Parts packaging code | SFM | SFM | - | SFM | - | SFM |
| Contacts | 3 | 3 | - | 3 | - | 3 |
| Is Samacsys | N | N | N | N | - | - |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |