BUK475-60B datasheet, PDF - EEWORLD Datasheet

BUK475-60B: DescriptionTRANSISTOR 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size295KB，5 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK475-60B Overview

TRANSISTOR 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	400 pF
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	30 W
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	290 ns
Maximum opening time (tons)	130 ns
Base Number Matches	1

	BUK475-60B	BUK475-60A
Description	TRANSISTOR 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Is Samacsys	N	N
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (ID)	20 A	21 A
Maximum drain-source on-resistance	0.045 Ω	0.038 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	400 pF	400 pF
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	30 W	30 W
Maximum pulsed drain current (IDM)	80 A	84 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	290 ns	290 ns
Maximum opening time (tons)	130 ns	130 ns
Base Number Matches	1	1

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