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MJD32

Description
3 A, 40 V, PNP, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size95KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MJD32 Overview

3 A, 40 V, PNP, Si, POWER TRANSISTOR

MJD32 Parametric

Parameter NameAttribute value
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment1.56 W
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max1.2 V
Base Number Matches1
MJD31 (NPN), MJD32 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
www.onsemi.com
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
40
100
V
CB
40
100
V
EB
I
C
I
CM
I
B
P
D
15
0.12
P
D
1.56
0.012
T
J
, T
stg
HBM
MM
−65 to
+ 150
3B
C
5.0
3.0
5.0
1.0
Vdc
Adc
Adc
Adc
W
W/°C
W
W/°C
°C
V
V
Vdc
Max
Unit
Vdc
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
COMPLEMENTARY
COLLECTOR
2,4
COLLECTOR
2,4
1
BASE
3
EMITTER
1
BASE
3
EMITTER
4
4
1 2
3
DPAK
CASE 369C
STYLE 1
1
3
IPAK
CASE 369D
STYLE 1
2
MARKING DIAGRAMS
AYWW
J3xxG
DPAK
A
Y
WW
xx
G
YWW
J3xxG
IPAK
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering Purposes
Symbol
R
qJC
R
qJA
T
L
Max
8.3
80
260
Unit
°C/W
°C/W
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
©
Semiconductor Components Industries, LLC, 2016
1
September, 2016 − Rev. 16
Publication Order Number:
MJD31/D
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