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M28F220-60YM6

Description
256KX8 FLASH 12V PROM, 60ns, PDSO44, 0.525 INCH, PLASTIC, SO-44
Categorystorage    storage   
File Size226KB,32 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M28F220-60YM6 Overview

256KX8 FLASH 12V PROM, 60ns, PDSO44, 0.525 INCH, PLASTIC, SO-44

M28F220-60YM6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.525 INCH, PLASTIC, SO-44
Contacts44
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Maximum access time60 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width16
startup blockBOTTOM
command user interfaceYES
Data pollingNO
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length28.2 mm
memory density2097152 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size1,2,1,1
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage12 V
Certification statusNot Qualified
Maximum seat height2.62 mm
Department size16K,8K,96K,128K
Maximum standby current0.000008 A
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width13.3 mm
Base Number Matches1
M28F220
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory
5V
±
10% SUPPLY VOLTAGE
12V
±
5% or
±
10% PROGRAMMING
VOLTAGE
FAST ACCESS TIME: 60ns
PROGRAM/ERASE CONTROLLER (P/E.C.)
AUTOMATIC STATIC MODE
MEMORY ERASE in BLOCKS
– Boot Block (Bottom location) with hardware
write and erase protection
– Parameter and Main Blocks
100,000 PROGRAM/ERASE CYCLES
LOW POWER CONSUMPTION
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 00E6h
44
1
TSOP48 (N)
12 x 20mm
SO44 (M)
Figure 1. Logic Diagram
Table 1. Signal Names
A0-A16
DQ0-DQ7
DQ8-DQ14
DQ15A–1
E
G
W
BYTE
WP
RP
V
PP
V
CC
V
SS
Address Inputs
Data Input / Outputs
Data Input / Outputs
VCC
VPP
17
A0-A16
15
RP
DQ0-DQ14
M28F220
BYTE
DQ15A–1
Data Input/Output or Address Input
Chip Enable
Output Enable
Write Enable
Byte/Word Organization
Write Protect
Reset/Power Down/Boot Block
Unlock
Program & Erase Supply Voltage
Supply Voltage
Ground
W
E
G
WP
VSS
AI01297B
August 1998
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