NPN SILICON RF TRANSISTOR
NE856 SERIES
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 7 GHz
E
•
LOW NOISE FIGURE:
1.1 dB at 1 GHz
•
HIGH COLLECTOR CURRENT:
100 mA
•
HIGH RELIABILITY METALLIZATION
•
LOW COST
00 (CHIP)
V
CC
= 10 V, I
C
7 mA
MSG
4.0
20
Noise Figure, NF (dB)
3.5
3.0
2.5
G
A
15
MAG
10
Maximum Associated Gain, Maximum Stable Gain,
Associated Gain, MAG, MSG, G
A
(dB)
ers
mb o t
:
DESCRIPTION
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ded es o
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Ple ils:
e t a 63 5
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85
NE 5639R
NE 8
NEC's NE856 series of NPN epitaxial silicon transistors is
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain, and high current capability equate to
wide dynamic range and excellent linearity. The NE856 series
offers excellent performance and reliability at low cost. This is
achieved by NEC's titanium/platinum/gold metallization sys-
tem and their direct nitride passivated base surface process.
The NE856 series is available in chip form and a Micro-x
package for high frequency applications. It is also available in
several low cost plastic package styles.
32 (TO-92)
34 (SOT 89 STYLE)
18 (SOT 343 STYLE)
NE85600
NOISE FIGURE AND GAIN
vs. FREQUENCY
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
5
B
35 (MICRO-X)
19 (3 PIN ULTRA SUPER
MINI MOLD)
NF
MIN
2.0
1.5
1.0
0.4 0.5
1.0
2
3
4
5
Frequency, f (GHz)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005
NE856 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
NE85600
NE85618
NE85619
NE85630
NE85632
EIAJ
1
REGISTERED NUMBER
2SC5011
2SC5006
2SC4226
2SC3355
PACKAGE OUTLINE
00 (CHIP)
18
19
30
32
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
f
T
Gain Bandwidth Product at
GHz
7.0
6.5
6.5
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
GHz
3.0 4.5
4.5
NF
Noise Figure at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
dB
1.1
1.4
1.4
1.3
1.4
dB
2.1
2.1
2.2
2.2
V
CE
= 10 V, I
C
= 7 mA, f = 2 GHz
G
A
Associated Gain at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
f = 2 GHz
Insertion Power Gain at
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
f = 2 GHz
2
at
Forward Current Gain
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 3 V, I
C
= 7 mA
Collector Cutoff Current
at V
CB
= 15 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance
3
at
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (J-A)
dB
dB
dB
dB
13
7
11
7
9
50
13
7
120 300
80
μA
μA
pF
pF
mW
°C/W
1.0
1.0
1.0
1.0
0.7
0.5
1.0
700
0.5
0.9
150
833
100
1000
150
833
120 160
1.0
1.0
1.5
0.7
40
110 250
1.0
1.0
1.5
0.65 1.0
600
210
1.0
1.0
12.5
6.5
12
12
6
12
6
50
10
10
|S
21E
|
2
9.5
h
FE
50 120 300
120 300
I
CBO
I
EBO
C
re
P
T
R
TH (J-A)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
V
CE
= 10 V, I
C
= 20 mA
Noise Figure at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
f = 2 GHz
Associated Gain at
V
CE
= 10 V, I
C
= 7 mA, f = 1 GHz
f = 2 GHz
Insertion Power Gain at
V
CE
= 10 V, I
C
= 20 mA, f = 1 GHz
f = 2 GHz
2
at
Forward Current Gain
V
CE
= 10 V, I
C
= 20 mA
Collector Cutoff Current
at V
CB
= 15 V, I
E
= 0
mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance
3
at
V
CB
= 10 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (J to A)
NE85633
NE85634
2SC3356
2SC3357
33
34
MIN TYP MAX MIN TYP MAX
7.0
1.4
2.0
6.5
1.4
2.1
9
10
11.5
9.5
7
50
μA
μA
pF
mW
°C/W
0.55
120
300
1.0
1.0
1.0
200
625
0.65
50
120
300
1.0
1.0
1.0
2000
4
62.5
4
0.5
50
9
120
300
1.0
1.0
1.0
580
590
0.5
50
3.4
13.5
8.5
13
7
120
300
1.0
1.0
0.9
200
500
NE85635
NE85639/39R
2SC3603
2SC4093
35
39
MIN TYP MAX MIN TYP MAX
7.0
9.0
1.5
2.1
SYMBOLS
f
T
NF
UNITS
GHz
dB
dB
dB
dB
dB
dB
G
A
|S
21E
|
2
h
FE
I
CBO
I
EBO
C
re
P
T
R
TH (J-A)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width
≤
350
μs,
duty cycle
≤
2% pulsed.
3. C
re
measurement employs a three terminal capacitance bridge incorporating a
guard circuit. The emitter terminal shall be connected to the guard terminal.
4. With 2.5 cm
2
x 0.7 mm ceramic substrate (infinite heatsink).
NE856 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
20
12
3.0
100
150
2
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in
permanent damage.
2. Maximum T
J
for the NE85600 and NE85635 is 200°C.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
NE85633 AND NE85635
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
2.4
NE85634
Ceramic Substrate
2.5 cm
2
X 0.7 mm
R
TH (J-A)
= 62.5˚C/W
NE85632 AND NE85634
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation, P
T
(mW)
Total Power Dissipation, P
T
(W)
2.0
Aluminum
Heat Sink
for NE85632
300
NE85635
200
1.6
10
1.2
7.8
3.8
NE85633
100
0.8
NE85632
Free Air
NE85632
with Heat
Sink
0.4
NE85634
Free Air
0
0
50
100
150
200
0
0
50
100
150
Ambient Temperature, T
A
(°C)
Ambient Temperature, T
A
(°C)
COLLECTOR TO BASE
CAPACITANCE vs. COLLECTOR
TO BASE VOLTAGE
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
500
V
CE
= 10 V
Collector to Base Capacitance, C
OB
(pF)
5.0
2.0
DC Forward Current Gain, h
FE
3.0
300
200
1.0
0.7
0.5
0.3
0.2
NE85634
100
70
50
30
20
NE85632/
33
NE85635
0.1
1
2
3
5
7
10
20
30
50
10
1
2
3
5
7
10
20
30
50
Collector to Base Voltage, V
CB
(V)
Collector Current, I
C
(mA)
NE856 SERIES
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°C)
NE85634
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
25
25
NE85635
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
Insertion Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
V
CE
= 10 V
I
C
= 20 mA
20
Insertion Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
V
CE
= 10 V
I
C
= 20 mA
20
15
MAG
10
15
MAG
10
|S
21E
|
2
5
|S
21E
|
2
5
0
0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
-5
0.1
0.2 0.3
0.5
1
2
5
10
Frequency, f (GHz)
Frequency, f (GHz)
NE85632 AND NE85634
INTERMODULATION DISTORTION
vs. COLLECTOR CURRENT
-80
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 10 V
7
NE85633
NE85635
IM
3
-70
5
NE85632
NE85634
IM
2
, IM
3
(dB)
V
CE
= 10 V
V
O
= 100 dBμV/50
Ω
R
G
= R
L
= 50
Ω
-60
IM
2
3
-50
2
-40
IM
2
f = 90 + 100 MHz
IM
3
f = 2
X
200-190 MHz
1
1
2
3
5
7 10
20 30
50 70 100
-30
20
30
40
50
60
70
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
16
V
CE
= 10 V
f = 1 GHz
NE85635
INSERTION GAIN vs.
COLLECTOR CURRENT
24
V
CE
= 10 V
f = 500 MHz
Insertion Gain, |S
21E
|
2
(dB)
(dB)
14
NE85633
20
f = 1 GHz
16
12
Insertion Gain,
10
NE85632
|S
21E
|
2
12
f = 2 GHz
8
NE85634
8
6
4
4
1
2
3
5
7
10
20 30
50 70 100
0
1
2
5
10
20
50
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
NE856 SERIES
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
NE85633
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
25
6
NE85635
NOISE FIGURE
vs. COLLECTOR CURRENT
V
CE
= 10 V
f = 1 GHz
5
Insertion Gain, |S
21E
|
2
(dB)
Maximum Available Gain, MAG (dB)
V
CE
= 10 V
I
C
= 20 mA
20
Noise Figure, NF (dB)
MAG
15
2
|S21E|
10
4
3
2
5
1
0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
0
1
2
3
5
7
10
20
30
50 70 100
Frequency, f (GHz)
Collector Current, I
C
(mA)
NE85600
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
0.20
0.22
0.49
0.63
ANG
138
158
176
-141
Rn/50
0.13
0.19
0.23
0.47
NE85619
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
0.74
0.74
0.60
0.58
0.60
0.43
0.40
0.46
0.64
0.30
0.31
0.37
0.46
0.52
0.27
0.28
0.32
0.42
0.47
0.54
ANG
73
113
75
117
136
80
122
143
174
87
129
149
171
-150
83
123
143
172
-152
-134
Rn/50
1.23
0.62
0.36
0.20
0.16
0.17
0.10
0.09
0.04
0.12
0.09
0.08
0.06
0.14
0.13
0.10
0.08
0.06
0.14
0.45
V
CE
= 10 V, I
C
= 7 mA
500
1.2
21.86
1000
2000
4000
1.4
2.2
4.2
15.82
11.87
5.75
V
CE
= 2.5 V, I
C
= 0.3 mA
500
1.73
6.03
800
500
800
1000
500
800
1000
1500
500
800
1000
1500
2000
500
800
1000
1500
2000
2500
2.20
1.15
1.50
1.90
1.00
1.22
1.35
1.70
1.07
1.21
1.34
1.69
2.17
1.10
1.24
1.37
1.72
2.20
2.75
4.42
11.26
9.15
7.74
14.83
11.81
10.46
7.66
16.48
13.06
11.56
8.44
6.99
18.42
14.90
13.34
10.39
8.69
7.31
V
CC
= 2.5 V, I
C
= 1.0 mA
NE85630
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
FREQ.
(MHz)
500
800
1000
500
800
1000
1500
500
800
1000
1500
2000
500
1000
1500
2000
3000
NF
OPT
(dB)
1.88
2.63
3.14
1.34
1.75
1.98
2.51
1.10
1.32
1.50
1.88
2.36
1.15
1.27
1.66
2.22
3.30
G
A
(dB)
5.63
6.45
5.03
11.08
9.97
8.33
5.26
14.41
11.67
10.34
7.04
5.60
17.20
12.67
9.50
7.45
4.62
Γ
OPT
MAG
0.73
0.78
0.79
0.58
0.62
0.63
0.71
0.37
0.44
0.48
0.56
0.60
0.21
0.32
0.46
0.57
0.65
ANG
79
128
149
83
134
152
176
92
143
169
177
-150
113
177
-141
-118
-92
Rn/50
1.00
0.60
0.17
0.33
0.17
0.10
0.04
0.15
0.08
0.07
0.05
0.17
0.09
0.15
0.52
0.67
0.70
V
CE
= 2.5 V, I
C
= 3.0 mA
V
CE
= 2.5 V, I
C
= 0.3 mA
V
CE
= 3 V, I
C
= 5.0 mA
V
CE
= 2.5 V, I
C
= 1.0 mA
V
CE
= 2.5 V, I
C
= 3.0 mA
V
CE
= 10 V, I
C
= 7.0 mA
V
CE
= 10 V, I
C
= 7.0 mA
Embedded System
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