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2SB1127

Description
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, TO-126, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SB1127 Overview

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, TO-126, 3 PIN

2SB1127 Parametric

Parameter NameAttribute value
Objectid1481976609
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment10 W
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)320 MHz
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