BC807W / BC808W
BC807W / BC808W
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2
0.3
±0.1
PNP
200 mW
SOT-323
0.01 g
Version 2010-05-21
1
±0.1
3
Type
Code
1
2
1.25
±0.1
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.3
Dimensions - Maße [mm]
1=B
2=E
3=C
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E-B short
B open
C open
- V
CES
- V
CEO
- V
EBO
P
tot
- I
C
- I
CM
I
EM
- I
BM
T
j
T
S
2.1
±0.1
Grenzwerte (T
A
= 25°C)
BC807W
50 V
45 V
5V
200 mW
1
)
500 mA
1A
1A
200 mA
-55...+150°C
-55…+150°C
BC808W
30 V
25 V
Characteristics (T
j
= 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
- V
CE
= 1 V, - I
C
= 100 mA
Group -16
Group -25
Group -40
all groups
h
FE
h
FE
h
FE
h
FE
- V
CEsat
100
160
250
40
–
Kennwerte (T
j
= 25°C)
Min.
Typ.
–
–
–
–
–
Max.
250
400
600
–
0.7 V
- V
CE
= 1 V, - I
C
= 500 mA
- I
C
= 500 mA, - I
B
= 50 mA
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
http://www.diotec.com/
© Diotec Semiconductor AG
1
BC807W / BC808W
Characteristics (T
j
= 25°C)
Min.
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- V
CE
= 1 V, - I
C
= 500 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 20 V, (E open)
- V
CB
= 20 V, T
j
= 150°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- V
EB
= 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
=i
e
= 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
C
CBO
R
thA
–
–
< 625 K/W
1
)
BC817W / BC818W
10 pF
f
T
–
80 MHz
–
- I
EB0
–
–
100 nA
- I
CB0
- I
CB0
–
–
–
–
100 nA
5 µA
- V
BE
–
–
1.2 V
Kennwerte (T
j
= 25°C)
Typ.
Max.
Marking of available current gain groups per type
BC807-16 = 5A or 5CR BC808-16 = 5E or 5CR
Stempelung der lieferbaren Stromverstärkungsgruppen pro BC807-25 = 5B or 5CS BC808-25 = 5F or 5CS
Typ
BC807-40 = 5C or 5CT BC808-40 = 5G or 5CT
120
[%]
100
80
60
40
20
P
tot
0
0
T
A
50
100
150
[°C]
Power dissipation versus ambient temperature
1
)
Verlustleistung in Abh. von d. Umgebungstemp.
1
)
2
1
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
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