®
BULB39D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
HIGH RUGGEDNESS
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
3
1
APPLICATIONS
s
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BULB39D is manufactured using high
voltage Multi Epitaxial Planar technology to
enhance switching speeds while maintaining wide
RBSOA.
The BUL series is designed for use in electronics
transformers for halogen lamps.
D
2
PAK
(TO-263)
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
850
450
9
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
August 2001
1/6
BULB39D
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1.78
70
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 850 V
V
CE
= 850 V
V
EB
= 9 V
I
C
= 100 mA
L = 25 mH
450
T
j
= 125 C
o
Min.
Typ.
Max.
100
500
100
Unit
µA
µA
µA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
V
CEW
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
Maximum Collector
Emitter Voltage
Without Snubber
INDUCTIVE LOAD
Storage Time
Fall Time
Diode Forward Voltage
I
C
= 1 A
I
C
= 2.5 A
I
C
= 1 A
I
C
= 2.5 A
I
C
= 5 A
I
C
= 10 mA
I
C
= 6 A
V
BB
= -2.5 V
t
p
= 10
µs
I
C
= 2.5 A
V
BE(off)
= -5 V
V
CL
= 300 V
I
C
= 2 A
I
B
= 0.2 A
I
B
= 0.5 A
I
B
= 0.2 A
I
B
= 0.5 A
V
CE
= 10 V
V
CE
= 5 V
R
BB
= 0
Ω
L = 50µH
I
B(on)
= 0.5 A
R
BB
= 0
Ω
L = 1 mH
4
10
450
0.13
0.5
1.1
1.1
1.3
V
V
V
V
V
t
s
t
f
V
f
0.7
50
1.5
100
1.5
µs
ns
V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/6