BCW60DR datasheet, PDF - EEWORLD Datasheet

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BCW60DR: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size41KB，2 Pages; ManufacturerDiodes Incorporated

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BCW60DR Overview

Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT23, 3 PIN

BCW60DR Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	800 ns
Maximum opening time (tons)	150 ns
Base Number Matches	1

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SOT23 NPN SILICON PLANAR

SMALL SIGNAL TRANSISTORS

ISSUE 2 AUGUST 1995

PARTMARKING DETAILS

BCW60A AA

BCW60B AB

BCW60C AC

BCW60D AD

COMPLEMENTARY TYPE

BCW61

BCW60AR

BCW60BR

BCW60CR

BCW60DR

CR

DR

AR

BR

BCW60

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

P

TOT

tj:tstg

VALUE

32

5

200

50

330

-55 to +150

SOT23

UNIT

V

mA

mW

°C

FOUR TERMINAL NETWORK DATA (I

c

=2mA, V

CE

=5V, f=1kHz)

h

FE

Group A

Min.

h

11e

h

12e

h

21e

h

22e

1.6

Typ.

2.7

1.5

200

18

30

Max.

4.5

h

FE

Group B

Min.

2.5

Typ.

3.6

2

260

24

50

Max.

6.0

h

FE

Group C

Min.

3.2

Typ.

4.5

2

330

30

60

Max.

8.5

h

FE

Group D

Min.

4.5

Typ.

7.5

3

520

50

100

µ

S

Max.

12

k

Ω

10

-4

SWITCHING CIRCUIT

-V

BB

V

CC

(+10V)

R

2

R

L

1

µ

sec

+10V

t

r

< 5nsec

Mark/Space ratio < 0.01

Z

s

=50

Ω

50

Ω

R

1

t

r

< 5nsec

Z

in

≥

100k

Ω

Oscilloscope

PAGE NO

BCW60DR Related Products

	BCW60DR	FCC57-20640-ED0	BCW60AR
Description	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT23, 3 PIN	D Type Connector, 64 Contact(s), Male, 0.085 inch Pitch, Solder Lug Terminal, #4-40, Receptacle	Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT23, 3 PIN
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Parts packaging code	SOT-23	-	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3
Contacts	3	-	3
Maximum collector current (IC)	0.2 A	-	0.2 A
Collector-emitter maximum voltage	32 V	-	32 V
Configuration	SINGLE	-	SINGLE
Minimum DC current gain (hFE)	100	-	50
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3
Number of components	1	-	1
Number of terminals	3	-	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE
Polarity/channel type	NPN	-	NPN
Certification status	Not Qualified	-	Not Qualified
surface mount	YES	-	YES
Terminal form	GULL WING	-	GULL WING
Terminal location	DUAL	-	DUAL
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON
Nominal transition frequency (fT)	250 MHz	-	250 MHz
Maximum off time (toff)	800 ns	-	800 ns
Maximum opening time (tons)	150 ns	-	150 ns
Base Number Matches	1	-	1

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