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BU931ZPFI

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size108KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

BU931ZPFI Overview

Transistor

BU931ZPFI Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU931ZPFI
DESCRIPTION
·High
Voltage
·DARLINGTON
·Integrated
High Voltage Zener
APPLICATIONS
·Application
in high performance electronic car ignition
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CBO
V
CER
V
CES
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
(R
BE
=100Ω)
Collector-Emitter Voltage
(V
BE
=0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
350
350
350
350
5
20
5
60
150
-40~150
UNIT
V
V
V
V
V
A
A
W
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
2.08
UNIT
℃/W
isc Website:www.iscsemi.cn
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