2SB1225 datasheet, PDF - EEWORLD Datasheet

2SB1225: DescriptionPower Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size117KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB1225 Overview

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN

Parameter Name	Attribute value
Objectid	1417093231
Parts packaging code	TO-220ML
package instruction	TO-220ML, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 0.03
Shell connection	ISOLATED
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	2000
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	30 W
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
VCEsat-Max	1.5 V

	2SB1225	2SD1827
Description	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN
Objectid	1417093231	1417093221
Parts packaging code	TO-220ML	TO-220ML
package instruction	TO-220ML, 3 PIN	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 0.03	BUILT IN BIAS RESISTOR RATIO IS 0.03
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	10 A	10 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	2000	2000
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	NPN
Maximum power consumption environment	30 W	30 W
Maximum power dissipation(Abs)	30 W	30 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz
VCEsat-Max	1.5 V	1.5 V

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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