2SB1229 datasheet, PDF - EEWORLD Datasheet

2SB1229: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, NP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size122KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB1229 Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, NP, 3 PIN

Parameter Name	Attribute value
Objectid	1481157753
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.75 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.7 V

	2SB1229	2SD1835
Description	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, NP, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, NP, 3 PIN
Objectid	1481157753	1481157846
Parts packaging code	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	2 A	2 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	NPN
Maximum power dissipation(Abs)	0.75 W	0.75 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz
VCEsat-Max	0.7 V	0.4 V

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