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BCW61BLT1

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size294KB,5 Pages
ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.
Download Datasheet Parametric View All

BCW61BLT1 Overview

Transistor

BCW61BLT1 Parametric

Parameter NameAttribute value
MakerShandong Yiguang Electronic Joint Stock Co., Ltd.
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BCW61BLT1
PNP EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
TECHNICAL DATA
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
-32
-32
-5
-100
225
150
-55-150
Unit
V
V
V
mA
mW
PIN:
STYLE
NO.1
B
E
C
1
2
3
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Noise Figure
Symbol
BVceo
BVebo
Hfe
Vce(sat)
Vbe(sat)
Vbe(on)
Cob
NF
-0.68
-0.6
Min
-32
-5
140
310
-0.55
-1.05
-0.75
6
6
V
V
V
PF
dB
Max
Unit
V
V
Test Conditions
Ic= -2mA
Ie= -1uA
Ib=0
Ic=0
Vce= -5V Ic= -2mA
Ic= -50mA Ib= -1.25mA
Ic= -50mA Ib= -1.25mA
Vce= -5V Ic= -2mA
Vcb= -10V Ie=0 f=1MHz
Vce= -5V Ic= -0.2mA
F=1KHz Rs=2KΩ
I
C
= – 10 mAdc
I
B1
= – 1.0 mAdc
I
B2
= –1.0mAdc, V
BB
= –3.6 Vdc,
R
1
= R
2
=5.0KΩ, R
L
= 990Ω
SWITCHING CHARACTERISTICS
Turn–On Time
Turn–Off Time
t
on
t
off
150
800
ns
ns
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle≤ 2%
DEVICE MARKING:
BCW61BLT1=BB
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