2SB1231 datasheet, PDF - EEWORLD Datasheet

2SB1231: DescriptionPower Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size121KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB1231 Overview

Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

Parameter Name	Attribute value
Objectid	1417099104
Parts packaging code	TO-218
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	25 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	120 W
Maximum power dissipation(Abs)	120 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	0.8 V

	2SB1231	2SD1841
Description	Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN	100V/25A Switching Applications
Parts packaging code	TO-218	TO-218
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	2	2
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	25 A	25 A
Collector-emitter maximum voltage	100 V	100 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
JEDEC-95 code	TO-218	TO-218
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	NPN
Maximum power consumption environment	120 W	120 W
Maximum power dissipation(Abs)	120 W	120 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
VCEsat-Max	0.8 V	0.8 V

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