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2SB1234

Description
Driver Applications 
CategoryDiscrete semiconductor    The transistor   
File Size85KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SB1234 Overview

Driver Applications 

2SB1234 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage50 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)3000
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
VCEsat-Max1.5 V
Base Number Matches1

2SB1234 Related Products

2SB1234 2SD1851
Description Driver Applications  Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, CP, 3 PIN
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A
Collector-emitter maximum voltage 50 V 50 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 3000 4000
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
VCEsat-Max 1.5 V 1.5 V

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