Insulated Gate Bipolar Transistor, 200A I(C), 1600V V(BR)CES, N-Channel
| Parameter Name | Attribute value |
| Maker | SIEMENS |
| package instruction | FLANGE MOUNT, R-PUFM-X4 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Maximum collector current (IC) | 200 A |
| Collector-emitter maximum voltage | 1600 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JESD-30 code | R-PUFM-X4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 1750 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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