Power Transistors
2SB1255
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1895
Unit: mm
15.0±0.3
11.0±0.2
5.0±0.2
3.2
s
Features
q
q
q
q
16.2±0.5
12.5
3.5
Solder Dip
Optimum for 90W HiFi output
High foward current transfer ratio h
FE
: 5000 to 30000
Low collector to emitter saturation voltage V
CE(sat)
: < –2.5V
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
–160
–140
–8
–12
–15
100
3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
0.7
21.0±0.5
15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1
1.1±0.1
5.45±0.3
10.9±0.5
1
2
3
0.6±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
B
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –160V, I
E
= 0
V
CE
= –140V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –5V, I
C
= –1A
V
CE
= –5V, I
C
= –7A
I
C
= –7A, I
B
= –7mA
I
C
= –7A, I
B
= –7mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –7A, I
B1
= –7mA, I
B2
= 7mA,
V
CC
= –50V
20
1.0
1.5
1.2
–140
2000
5000
30000
–2.5
–3.0
V
V
MHz
µs
µs
µs
min
typ
max
–100
–100
–100
Unit
µA
µA
µA
V
FE2
Rank classification
Q
P
5000 to 15000 8000 to 30000
Rank
h
FE2
1
Power Transistors
P
C
— Ta
120
–12
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
(1)
T
C
=25˚C
–10
I
B
=–2mA
–1mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
–4
– 0.4mA
– 0.3mA
–2
(2)
(3)
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
– 0.2mA
2SB1255
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
V
CE(sat)
— I
C
I
C
/I
B
=1000
Collector power dissipation P
C
(W)
100
–30
80
Collector current I
C
(A)
–8
–10
T
C
=100˚C
–3
25˚C
–25˚C
–1
60
–6
40
20
– 0.3
– 0.1
– 0.1 – 0.3
–1
–3
–10
–30
–100
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–100
h
FE
— I
C
100000
V
CE
=–5V
1000
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
I
E
=0
f=1MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=1000
Forward current transfer ratio h
FE
30000
T
C
=100˚C
–30
25˚C
300
10000
–25˚C
–10
100
3000
1000
300
100
30
10
– 0.01 – 0.03 – 0.1 – 0.3
–3
T
C
=–25˚C
–1
100˚C
25˚C
30
10
– 0.3
3
– 0.1
– 0.1 – 0.3
–1
–3
–10
–30
–100
–1
–3
–10
1
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
t
on
, t
stg
, t
f
— I
C
100
30
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=1000
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
T
C
=25˚C
I
CP
I
C
–3
–1
10ms
DC
t=1ms
Switching time t
on
,t
stg
,t
f
(
µs
)
10
3 t
stg
t
f
1 t
on
0.3
0.1
0.03
0.01
0
–4
–8
Collector current I
C
(A)
–16
–10
– 0.3
– 0.1
– 0.03
– 0.01
–1
–12
–3
–10
–30
–100 –300 –1000
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
Power Transistors
R
th(t)
— t
10000
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
×
0.3A (3W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
2SB1255
Thermal resistance R
th
(t) (˚C/W)
1000
100
(1)
(2)
10
1
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
Microcontroller MCU
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