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OM6111CSA

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size370KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

OM6111CSA Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

OM6111CSA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)10 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
surface mountNO
Base Number Matches1

OM6111CSA Related Products

OM6111CSA
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified? incompatible
Maker International Rectifier ( Infineon )
Reach Compliance Code unknown
Is Samacsys N
Configuration Single
Maximum drain current (Abs) (ID) 10 A
FET technology METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 125 W
surface mount NO
Base Number Matches 1
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