Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1481977523 |
| Parts packaging code | TO-220MF |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| YTEOL | 0 |
| Other features | HIGH RELIABILITY |
| Maximum collector current (IC) | 3 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 70 |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 140 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 1.6 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 8 MHz |
| VCEsat-Max | 1 V |
| 2SB1266 | 2SD1902 | |
|---|---|---|
| Description | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN | POWER TRANSISTOR |
| Is it Rohs certified? | incompatible | incompatible |
| Parts packaging code | TO-220MF | TO-220MF |
| package instruction | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | unknow |
| ECCN code | EAR99 | EAR99 |
| Other features | HIGH RELIABILITY | HIGH RELIABILITY |
| Maximum collector current (IC) | 3 A | 3 A |
| Collector-emitter maximum voltage | 60 V | 60 V |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 70 | 70 |
| JESD-30 code | R-PSIP-T3 | R-PSIP-T3 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 140 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE |
| Polarity/channel type | PNP | NPN |
| Maximum power dissipation(Abs) | 1.6 W | 30 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | TIN LEAD | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| transistor applications | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 8 MHz | 40 MHz |
| VCEsat-Max | 1 V | 1 V |
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