2SB1270 datasheet, PDF - EEWORLD Datasheet

2SB1270: DescriptionPower Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size123KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB1270 Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN

Parameter Name	Attribute value
Objectid	1481157609
Parts packaging code	TO-220MF
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz

	2SB1270	2SD1906
Description	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN
Objectid	1481157609	1481157717
Parts packaging code	TO-220MF	TO-220MF
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	5 A	5 A
Collector-emitter maximum voltage	80 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30
JESD-30 code	R-PSIP-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Polarity/channel type	PNP	NPN
Maximum power dissipation(Abs)	30 W	30 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz

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