Transistor
2SB1288
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
Unit: mm
5.0±0.2
4.0±0.2
s
Features
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
–30
–20
–7
–10
–5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1 2 3
2.54±0.15
1.27
0.45
–0.1
1.27
+0.15
13.5±0.5
Low collector to emitter saturation voltage V
CE(sat)
.
Large collector current I
C
.
Allowing supply with the radial taping.
0.7±0.1
0.7±0.2
8.0±0.2
0.45
–0.1
+0.15
2.3±0.2
1:Emitter
2:Collector
3:Base
TO–92NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –2A
*2
I
C
= –3A, I
B
= –0.1A
*2
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
*2
min
typ
max
–100
–100
Unit
nA
nA
V
V
–20
–7
90
625
–1
120
85
V
MHz
pF
Pulse measurement
*1
h
FE
Rank classification
P
90 ~ 135
Q
120 ~ 205
R
180 ~ 625
Rank
h
FE
1
Transistor
P
C
— Ta
1.2
–6
Ta=25˚C
I
B
=–40mA
1.0
–5
–35mA
–30mA
–25mA
–4
–20mA
–15mA
–10mA
–2
–5mA
–1
–1mA
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
0
– 0.4
– 0.8
–10
2SB1288
I
C
— V
CE
–12
V
CE
=–2V
25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
Collector current I
C
(A)
Ta=75˚C
–8
–25˚C
0.8
0.6
–3
–6
0.4
–4
0.2
–2
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=30
600
h
FE
— I
C
240
V
CE
=–2V
Ta=75˚C
500
25˚C
f
T
— I
E
V
CB
=–6V
Ta=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
–1
–3
–10
200
400
160
300
–25˚C
120
– 0.3
– 0.1
– 0.03
200
80
100
40
– 0.01
– 0.01 – 0.03 – 0.3 – 0.1
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
200
–100
I
E
=0
f=1MHz
Ta=25˚C
–30
Area of safe operation (ASO)
Single pulse
Ta=25˚C
Collector output capacitance C
ob
(pF)
180
160
140
120
100
80
60
40
20
0
–1
Collector current I
C
(A)
–10
–3
–1
I
CP
I
C
t=1s
t=10ms
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
–3
–10
–30
–100
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
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