Power Transistors
2SB1299
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1273
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
7.5±0.2
16.7±0.3
φ3.1±0.1
14.0±0.5
s
4.0
Absolute Maximum Ratings
(T
C
=25˚C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25°C
P
C
T
j
T
stg
Ratings
–60
–60
–6
–6
–3
–1
40
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
1.4±0.1
1.3±0.2
Solder Dip
0.5
+0.2
–0.1
0.8±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Junction temperature
Storage temperature
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
h
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= –60V, I
E
= 0
V
CE
= –40V, I
B
= 0
V
EB
= –6V, I
C
= 0
I
C
= –25mA, I
B
= 0
V
CE
= –4V, I
C
= – 0.5A
I
C
= –2A, I
B
= – 0.05A
V
CE
= –12V, I
C
= – 0.2A, f = 10MHz
30
–60
300
700
–1
V
MHz
min
typ
max
–100
–100
–100
Unit
µA
µA
µA
V
FE
Rank classification
Q
300 to 500
P
400 to 700
h
FE
Rank
1
Power Transistors
P
C
— Ta
60
–12
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
–10
–5
I
B
=–100mA
–80mA
–60mA
–40mA
–6
–20mA
–4
–10mA
–5mA
–2
–2mA
0
0
20
40
60
80 100 120 140 160
0
–2
–4
–6
–8
–10
–12
0
0
– 0.4
– 0.8
2SB1299
I
C
— V
CE
–6
V
CE
=–4V
I
C
— V
BE
Collector power dissipation P
C
(W)
50
Collector current I
C
(A)
40
(1)
30
–8
Collector current I
C
(A)
–4
–3
20
(2)
(3)
0
(4)
–2
T
C
=125˚C
25˚C
–25˚C
10
–1
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=40
–30
–10
25˚C
–3
–1
T
C
=100˚C
–25˚C
10000
h
FE
— I
C
V
CE
=–4V
1000
f
T
— I
C
V
CE
=–12V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
3000
T
C
=100˚C
25˚C
Transition frequency f
T
(MHz)
–1
–3
–10
300
1000
–25˚C
300
100
30
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
100
10
30
3
–1
–3
–10
10
– 0.01 – 0.03 – 0.1 – 0.3
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
1000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
— I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=40
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
Area of safe operation (ASO)
10
I
CP
t=1ms
Non
repetitive
pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
Switching time t
on
,t
stg
,t
f
(
µs
)
300
3
10
3
t
f
1
t
on
0.3
0.1
0.03
Collector current I
C
(A)
I
C
10ms
100
1
DC
0.3
30
t
stg
10
0.1
3
0.03
1
–1
0.01
–3
–10
–30
–100
0
–2
–4
–6
–8
0.01
–1
–3
–10
–30
–100 –300 –1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
Power Transistors
R
th(t)
— t
10000
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
×
0.2A (2W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
2SB1299
Thermal resistance R
th
(t) (˚C/W)
1000
100
(1)
(2)
10
1
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
京公网安备 11010802033920号
EEWORLD
