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2SB1339

Description
3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size89KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SB1339 Overview

3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB

2SB1339 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)6 A
Collector-emitter maximum voltage120 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment40 W
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)12 MHz
VCEsat-Max1.5 V
Base Number Matches1
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