Power Transistors
2SB1361
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2052
Unit: mm
q
q
q
q
16.2±0.5
12.5
3.5
Solder Dip
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
Wide area of safe operation (ASO)
High transition frequency f
T
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
–150
–150
–5
–15
–9
100
3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
0.7
s
Features
15.0±0.3
11.0±0.2
5.0±0.2
3.2
21.0±0.5
15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1
1.1±0.1
5.45±0.3
10.9±0.5
1
2
3
0.6±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –150V, I
E
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –5V, I
C
= –20mA
V
CE
= –5V, I
C
= –1A
V
CE
= –5V, I
C
= –7A
V
CE
= –5V, I
C
= –7A
I
C
= –7A, I
B
= – 0.7A
V
CE
= –5V, I
C
= – 0.5A, f = 1MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
15
270
20
60
20
–1.8
–2.0
V
V
MHz
pF
200
min
typ
max
–50
–50
Unit
µA
µA
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
S
80 to 160
P
100 to 200
Rank
h
FE2
1
Power Transistors
P
C
— Ta
120
2SB1361
I
C
— V
CE
–12
T
C
=25˚C
–10
I
B
=–300mA
–200mA
–8
–150mA
–6
–100mA
–80mA
–60mA
–4
–40mA
–20mA
–10mA
0
0
0
–2
–4
–6
–8
–10
–12
0
–1
–2
–3
–10
–12
V
CE
=–5V
I
C
— V
BE
Collector power dissipation P
C
(W)
100
Collector current I
C
(A)
Collector current I
C
(A)
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
25˚C
–8
T
C
=–25˚C
100˚C
80
60
(1)
–6
40
–4
20
(2)
(3)
0
0
20
40
60
80 100 120 140 160
–2
–2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=10
–30
–10
–3
–1
T
C
=100˚C
25˚C
–25˚C
1000
h
FE
— I
C
V
CE
=–5V
1000
f
T
— I
C
V
CE
=–5V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
300
Transition frequency f
T
(MHz)
–1
–3
–10
–30
–100
T
C
=100˚C
25˚C
300
100
–25˚C
30
100
30
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
10
10
3
3
–1
–3
–10
–30
–100
1
– 0.1 – 0.3
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
Area of safe operation (ASO)
–100
I
E
=0
f=1MHz
T
C
=25˚C
–30
Non repetitive pulse
T
C
=25˚C
I
CP
t=10ms
–10
–3
–1
I
C
100ms
Collector output capacitance C
ob
(pF)
3000
1000
300
Collector current I
C
(A)
DC
100
– 0.3
– 0.1
– 0.03
30
10
–1
–3
–10
–30
–100
– 0.01
–1
–3
–10
–30
–100 –300 –1000
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
Power Transistors
R
th(t)
— t
10000
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) P
T
=10V
×
0.3A (3W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
2SB1361
Thermal resistance R
th
(t) (˚C/W)
1000
100
(1)
10
(2)
1
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
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