3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 6 A |
| Collector-emitter maximum voltage | 120 V |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Minimum DC current gain (hFE) | 2000 |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e2 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 30 W |
| Maximum power dissipation(Abs) | 30 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Copper (Sn/Cu) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 12 MHz |
| VCEsat-Max | 1.5 V |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
