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2SB1392

Description
Silicon PNP Triple Diffused
CategoryDiscrete semiconductor    The transistor   
File Size28KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SB1392 Overview

Silicon PNP Triple Diffused

2SB1392 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220FM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SB1392
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220FM
12
3
1. Base
2. Collector
3. Emitter
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tj
Tstg
Ratings
–70
–60
–5
–4
–8
2
25
150
–55 to +150
°C
°C
Unit
V
V
V
A
A
W

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