Power Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2138 and 2SD2138A
13.0±0.2
4.2±0.2
Unit: mm
5.0±0.1
10.0±0.2
1.0
s
Features
q
q
q
High foward current transfer ratio h
FE
High-speed switching
Allowing automatic insertion with radial taping
(T
C
=25˚C)
Ratings
–60
–80
–60
–80
–5
–4
–2
15
2.0
150
–55 to +150
Unit
V
90°
2.5±0.2
1.2±0.1
C1.0
2.25±0.2
18.0±0.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB1418
2SB1418A
2SB1418
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
0.35±0.1
0.65±0.1
1.05±0.1
0.55±0.1
0.55±0.1
C1.0
1 2 3
emitter voltage 2SB1418A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
2.5±0.2
2.5±0.2
V
A
A
W
˚C
˚C
B
1:Base
2:Collector
3:Emitter
MT4 Type Package
Internal Connection
C
E
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB1418
2SB1418A
2SB1418
2SB1418A
2SB1418
2SB1418A
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
off
Conditions
V
CB
= –60V, I
B
= 0
V
CB
= –80V, I
B
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –40V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –2A
V
CE
= –4V, I
C
= –2A
I
C
= –2A, I
B
= –8mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –2A, I
B1
= –8mA, I
B2
= 8mA,
V
CC
= –50V
20
0.2
2
–60
–80
1000
2000
10000
–2.8
–2.5
V
V
MHz
µs
µs
min
typ
max
–100
–100
–100
–100
–100
Unit
µA
µA
µA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time
*
h
FE2
Rank classification
Q
P
Rank
h
FE2
2000 to 5000 4000 to 10000
1
Power Transistors
P
C
— Ta
20
–6
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
15
T
C
=25˚C
–5
2SB1418, 2SB1418A
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=250
–30
–10
T
C
=100˚C
–3
–1
25˚C
–25˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
–4
(1)
10
–1.6mA
–1.8mA
–1.4mA
–1.2mA
I
B
=–2.0mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
–3
–2
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
5
–1
(2)
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
– 0.2mA
–10
–12
–1
–3
–10
–30
–100
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
I
C
— V
BE
–6
V
CE
=–4V
100000
h
FE
— I
C
1000
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=–4V
I
E
=0
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
–5
30000
T
C
=100˚C
25˚C
300
Collector current I
C
(A)
10000
–4
T
C
=100˚C
–3
25˚C
100
3000
–25˚C
1000
300
100
30
10
– 0.01 – 0.03 – 0.1 – 0.3
30
–2
10
–1
–25˚C
3
0
0
–1
–2
–3
–4
–1
–3
–10
1
–1
–3
–10
–30
–100
Base to emitter voltage V
BE
(V)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
T
C
=25˚C
10000
R
th(t)
— t
Note: R
th
was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
–10
I
CP
–3
–1
I
C
10ms
DC
t=1ms
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
1000
100
(1)
(2)
– 0.3
– 0.1
– 0.03
– 0.01
–1
10
2SB1418A
2SB1418
1
–3
–10
–30
–100 –300 –1000
0.1
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
Industrial Control Electronics
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